An Approach to Terahertz Optical Switching for Silicon Photonics
February 24th, 2017 RICHARD HAGLUND Vanderbilt University

While the age of silicon photonics is upon us, optical modulators for this technology remain elusive. The electro-optic effect in silicon is weak, so that even resonant switching devices (such as ring resonators) must be both large and sensitive to temperature. For some time, we have been working on hybrid silicon-vanadium dioxide ring resonators that have already shown promise in nanosecond switching [1] and have the potential to achieve near-THz switching frequencies. We are now pushing forward to the next stage, which requires going to femtosecond switching at near band-edge wavelengths (around 1600 nm) for vanadium dioxide. I will describe our progress in developing the fabrication and optical techniques and tools needed to reach our objective of demonstrating 500 GHz switching.

Seminar, February 24, 2017, 15:00. Seminar Room

Hosted by Prof. Simon Wall