Seminars
January 13, 2016
L4G SEMINAR XAVIER MARIE 'Exciton and Valley Dynamics in 2d Semiconductors Based on Transition Metal Dichalcogenides'
L4G SEMINAR XAVIER MARIE 'Exciton and Valley Dynamics in 2d Semiconductors Based on Transition Metal Dichalcogenides'
XAVIER MARIE
Université de Toulouse, INSA-CNRS-UPS, LPCNO
Wednesday, January 13, 2016, 12:00. ICFO’s Seminar Room
XAVIER MARIE
Université de Toulouse, INSA-CNRS-UPS, LPCNO
XAVIER MARIE
Université de Toulouse, INSA-CNRS-UPS, LPCNO
The spectacular progress in controlling the electronic properties of graphene has triggered
research in alternative atomically thin two-dimensional crystals. Monolayers (ML) of transitionmetal
dichalcogenides such as MoS2 have emerged as very promising nanostructures for optical
and electronic applications for mainly two reasons.
First, the indirect bulk semiconductor MoS2 becomes direct when thinned to 1ML, resulting in efficient optical absorption and emission. Second, inversion symmetry breaking (usually absent in graphene) together with the large spin-orbit interaction leads to a coupling of carrier spin and k-space valley physics, i.e., the circular polarization (σ+ or σ−) of the absorbed or emitted photon can be directly associated with selective carrier excitation in one of the two nonequivalent k valleys (K+ or K−, respectively). We have investigated the optical and valley properties for both neutral and charged excitons in transition metal dichalcogenide monolayers. In this talk I will give an overview of the physical properties of 2D semiconductors based on Transition Metal Dichalcogenides (MoS2, MoSe2, WS2, WSe2, MoWSe2) : band structure, exciton effects, spin and valley dynamics…
Wednesday, January 13, 2016, 12:00. ICFO’s Seminar Room
Hosted by Prof. Adrian Bachtold
First, the indirect bulk semiconductor MoS2 becomes direct when thinned to 1ML, resulting in efficient optical absorption and emission. Second, inversion symmetry breaking (usually absent in graphene) together with the large spin-orbit interaction leads to a coupling of carrier spin and k-space valley physics, i.e., the circular polarization (σ+ or σ−) of the absorbed or emitted photon can be directly associated with selective carrier excitation in one of the two nonequivalent k valleys (K+ or K−, respectively). We have investigated the optical and valley properties for both neutral and charged excitons in transition metal dichalcogenide monolayers. In this talk I will give an overview of the physical properties of 2D semiconductors based on Transition Metal Dichalcogenides (MoS2, MoSe2, WS2, WSe2, MoWSe2) : band structure, exciton effects, spin and valley dynamics…
Wednesday, January 13, 2016, 12:00. ICFO’s Seminar Room
Hosted by Prof. Adrian Bachtold
Seminars
January 13, 2016
L4G SEMINAR XAVIER MARIE 'Exciton and Valley Dynamics in 2d Semiconductors Based on Transition Metal Dichalcogenides'
L4G SEMINAR XAVIER MARIE 'Exciton and Valley Dynamics in 2d Semiconductors Based on Transition Metal Dichalcogenides'
XAVIER MARIE
Université de Toulouse, INSA-CNRS-UPS, LPCNO
Wednesday, January 13, 2016, 12:00. ICFO’s Seminar Room
XAVIER MARIE
Université de Toulouse, INSA-CNRS-UPS, LPCNO
XAVIER MARIE
Université de Toulouse, INSA-CNRS-UPS, LPCNO
The spectacular progress in controlling the electronic properties of graphene has triggered
research in alternative atomically thin two-dimensional crystals. Monolayers (ML) of transitionmetal
dichalcogenides such as MoS2 have emerged as very promising nanostructures for optical
and electronic applications for mainly two reasons.
First, the indirect bulk semiconductor MoS2 becomes direct when thinned to 1ML, resulting in efficient optical absorption and emission. Second, inversion symmetry breaking (usually absent in graphene) together with the large spin-orbit interaction leads to a coupling of carrier spin and k-space valley physics, i.e., the circular polarization (σ+ or σ−) of the absorbed or emitted photon can be directly associated with selective carrier excitation in one of the two nonequivalent k valleys (K+ or K−, respectively). We have investigated the optical and valley properties for both neutral and charged excitons in transition metal dichalcogenide monolayers. In this talk I will give an overview of the physical properties of 2D semiconductors based on Transition Metal Dichalcogenides (MoS2, MoSe2, WS2, WSe2, MoWSe2) : band structure, exciton effects, spin and valley dynamics…
Wednesday, January 13, 2016, 12:00. ICFO’s Seminar Room
Hosted by Prof. Adrian Bachtold
First, the indirect bulk semiconductor MoS2 becomes direct when thinned to 1ML, resulting in efficient optical absorption and emission. Second, inversion symmetry breaking (usually absent in graphene) together with the large spin-orbit interaction leads to a coupling of carrier spin and k-space valley physics, i.e., the circular polarization (σ+ or σ−) of the absorbed or emitted photon can be directly associated with selective carrier excitation in one of the two nonequivalent k valleys (K+ or K−, respectively). We have investigated the optical and valley properties for both neutral and charged excitons in transition metal dichalcogenide monolayers. In this talk I will give an overview of the physical properties of 2D semiconductors based on Transition Metal Dichalcogenides (MoS2, MoSe2, WS2, WSe2, MoWSe2) : band structure, exciton effects, spin and valley dynamics…
Wednesday, January 13, 2016, 12:00. ICFO’s Seminar Room
Hosted by Prof. Adrian Bachtold